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2N4264 Datasheet(PDF) 3 Page - ON Semiconductor |
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2N4264 Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 6 page 2N4264 3 Motorola Small–Signal Transistors, FETs and Diodes Device Data CURRENT GAIN CHARACTERISTICS Figure 2. Minimum Current Gain IC, COLLECTOR CURRENT (mA) 20 30 50 70 100 2.0 3.0 10 50 70 10 100 1.0 200 30 20 5.0 7.0 2N4264 VCE = 1 V TJ = 125°C 25 °C –15 °C –55 °C When a transistor is held in a conductive state by a base current, IB, a charge, QS, is developed or “stored” in the transistor. QS may be written: QS = Q1 + QV + QX. Q1 is the charge required to develop the required collector current. This charge is primarily a function of alpha cutoff frequency. QV is the charge required to charge the collector–base feedback capacity. QX is excess charge resulting from overdrive, i.e., operation in saturation. The charge required to turn a transistor “on” to the edge of saturation is the sum of Q1 and QV which is defined as the active region charge, QA. QA = IB1tr when the transistor is driven by a constant current step (IB1) and IB1 < < IC hFE . If IB were suddenly removed, the transistor would continue to conduct until QS is removed from the active regions through an external path or through internal recombination. Since the internal recombination time is long compared to the ultimate capability of a transistor, a charge, QT, of opposite polarity, equal in magnitude, can be stored on an external capacitor, C, to neutralize the internal charge and considerably reduce the turn–off time of the transistor. Figure 3 shows the test circuit and Figure 4 the turn–off waveform. Given QT from Figure 13, the external C for worst–case turn–off in any circuit is: C = QT/∆V, where ∆V is defined in Figure 3. NOTE 1 Figure 3. QT Test Circuit Figure 4. Turn–Off Waveform +10 V t1 ∆V <1 ns 3 V 270 Ω 8 pF 9.2 k Ω CS < 4 pF C COPT TIME C < COPT C = 0 PULSE WIDTH (t1) = 5 µs DUTY CYCLE = 2% 0 |
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