Rev. 4259A–AERO–06/03

1

Features

– Internal Address and Data Latches for 128 Bytes

– Internal Control Timer

– Page Write Cycle Time – 10 ms Maximum

– 1 to 128-byte Page Write Operation

– 80 mA Active Current

– 300 µA CMOS Standby Current

– Endurance: 10

– Data Retention: 10 Years

Description

The AT28C010-12DK is a high-performance Electrically Erasable and Programmable

Read-Only Memory. Its one megabit of memory is organized as 131,072 words by 8

bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device

offers access times to 120 ns with power dissipation of just 440 mW. When the device

is deselected, the CMOS standby current is less than 300

µA.

The AT28C010-12DK is accessed like a Static RAM for the read or write cycle without

the need for external components. The device contains a 128-byte page register to

allow writing of up to 128 bytes simultaneously. During a write cycle, the address and

1 to 128 bytes of data are internally latched, freeing the address and data bus for

other operations. Following the initiation of a write cycle, the device will automatically

write the latched data using an internal control timer. The end of a write cycle can be

detected by DATA POLLING of I/O7. Once the end of a write cycle has been detected

a new access for a read or write can begin.

Atmel's 28C010 has additional features to ensure high quality in manufacturing. The

device utilizes internal error correction for extended endurance and improved data

retention characteristics. An optional software data protection mechanism is available

to guard against inadvertent writes. The device also includes an extra 128 bytes of

EEPROM for device identification or tracking.

AT28C010-12DK Mil

Space

1-megabit

(128K x 8)

Paged Parallel

EEPROMs

AT28C010-12DK

Preliminary