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P4SMA33CA Datasheet(PDF) 3 Page - Taiwan Semiconductor Company, Ltd |
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P4SMA33CA Datasheet(HTML) 3 Page - Taiwan Semiconductor Company, Ltd |
3 / 4 page - 548 - ELECTRICAL CHARACTERISTICS (TA=25 OC unless otherwise noted) Test Stand-Off Maximum Maximum Maximum Maximum Device Device Current Voltage Reverse Leakage Peak Pulse Clamping Temperature Marking @IT VWM at VWM Current IPPM Voltage at IPPM Coefficient Code Min Max (mA) (Volts) ID (uA) (Note 2)(Amps) VC(Volts) of VBR(% / OC) P4SMA100 CWJ 90.0 110.0 1.0 81.0 5.0 2.9 144.0 0.106 P4SMA100A CXJ 95.0 105.0 1.0 85.5 5.0 3.0 137.0 0.106 P4SMA110 CYJ 99.0 121.0 1.0 89.2 5.0 2.6 158.0 0.107 P4SMA110A CZJ 105.0 116.0 1.0 94.0 5.0 2.7 152.0 0.107 P4SMA120 RDJ 108.0 132.0 1.0 97.2 5.0 2.4 173.0 0.107 P4SMA120A REJ 114.0 126.0 1.0 102.0 5.0 2.5 165.0 0.107 P4SMA130 RFJ 117.0 143.0 1.0 105.0 5.0 2.2 187.0 0.107 P4SMA130A RGJ 124.0 137.0 1.0 111.0 5.0 2.3 179.0 0.107 P4SMA150 RHJ 135.0 165.0 1.0 121.0 5.0 1.9 215.0 0.108 P4SMA150A RKJ 143.0 158.0 1.0 128.0 5.0 2.0 207.0 0.108 P4SMA160 RLJ 144.0 176.0 1.0 130.0 5.0 1.8 230.0 0.108 P4SMA160A RMJ 152.0 168.0 1.0 136.0 5.0 1.9 219.0 0.108 P4SMA170 RNJ 153.0 187.0 1.0 138.0 5.0 1.7 244.0 0.108 P4SMA170A RPJ 162.0 179.0 1.0 145.0 5.0 1.8 234.0 0.108 P4SMA180 RQJ 162.0 198.0 1.0 146.0 5.0 1.6 258.0 0.108 P4SMA180A RRJ 171.0 189.0 1.0 154.0 5.0 1.7 246.0 0.108 P4SMA200 RSJ 180.0 220.0 1.0 162.0 5.0 1.4 287.0 0.108 P4SMA200A RTJ 190.0 210.0 1.0 171.0 5.0 1.51 274.0 0.108 Notes: 1. VBR measured after IT applied for 300us, IT=square wave pulse or equivalent. 2. Surge current waveform per Figure 3 and derate per Figure 2. 3. For bipolar types having VWM of 10 volts and under, the ID limit is doubled. 4. For bidirectional use C or CA suffix for types P4SMA6.8 through P4SMA200A. 5. All terms and symbols are consistent with ANSI/IEEE C62.35. VBR (Volts) (Note 1) Breakdown Voltage |
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