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MRF6P21190HR6 Datasheet(PDF) 5 Page - Freescale Semiconductor, Inc

Part # MRF6P21190HR6
Description  RF Power Field Effect Transistor, N-Channel Enhancement-Mode Lateral MOSFET
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Manufacturer  FREESCALE [Freescale Semiconductor, Inc]
Direct Link  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

MRF6P21190HR6 Datasheet(HTML) 5 Page - Freescale Semiconductor, Inc

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MRF6P21190HR6
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
−30
−10
−15
−20
−25
2220
2080
IRL
Gps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 3. 2-Carrier W-CDMA Broadband Performance @ Pout = 44 Watts Avg.
VDD = 28 Vdc, Pout = 44 W (Avg.), IDQ = 1900 mA
2−Carrier W−CDMA, 10 MHz Carrier Spacing
2200
2180
2160
2140
2120
2100
4
20
18
16
14
12
10
8
6
−50
40
30
20
10
−10
−20
−30
−40
ηD
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
−30
−10
−15
−20
−25
2220
2080
IRL
Gps
ACPR
IM3
f, FREQUENCY (MHz)
Figure 4. 2-Carrier W-CDMA Broadband Performance @ Pout = 87 Watts Avg.
VDD = 28 Vdc, Pout = 87 W (Avg.), IDQ = 1900 mA
2−Carrier W−CDMA, 10 MHz Carrier Spacing
2200
2180
2160
2140
2120
2100
4
20
18
16
14
12
10
8
6
−40
50
40
30
20
0
−10
−20
−30
ηD
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
Figure 5. Two-Tone Power Gain versus
Output Power
100
14
17
1
IDQ = 2500 mA
2200 mA
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
16.5
16
15.5
10
400
Pout, OUTPUT POWER (WATTS) PEP
14.5
15
1900 mA
1600 mA
1300 mA
Figure 6. Third Order Intermodulation Distortion
versus Output Power
−45
−30
1
IDQ = 2500 mA
1300 mA
100
−35
−40
400
−55
−50
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
10
Pout, OUTPUT POWER (WATTS) PEP
2200 mA
1900 mA
1600 mA


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