HN58V66AT-10SRE datasheet(7/28 Pages) RENESAS

Part #	HN58V66AT-10SRE

Description	64k EEPROM (8-kword x 8-bit) Ready/Busy function, RES function (HN58V66A) Wide Temperature Range version

Download	28 Pages

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Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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7 / 28 page

HN58V65AI/HN58V66AI/HN58V65A-SR/HN58V66A-SR Series

Rev.3.00, Feb.02.2004, page 7 of 26

Capacitance (Ta = +25

°C, f = 1 MHz)

Parameter

Symbol

Min

Typ

Max

Unit

Test conditions

Input capacitance

Cin*

1



6

pF

Vin = 0 V

Output capacitance

Cout*

1



12

pF

Vout = 0 V

Note:

1. This parameter is sampled and not 100% tested.

AC Characteristics

(Ta =

−40 to +85°C, V

CC = 2.7 to 5.5 V: HN58V65AI/HN58V66AI,

Ta =

−20 to +85°C, V

CC = 2.7 to 5.5 V: HN58V65A-SR/HN58V66A-SR)

Test Conditions

• Input pulse levels :

0.4 V to 2.4 V (VCC = 2.7 to 3.6 V), 0.4 V to 3.0 V (VCC = 3.6 to 5.5 V)

0 V to VCC (RES pin*

2)

• Input rise and fall time : ≤ 5 ns

• Input timing reference levels : 0.8, 1.8 V

• Output load : 1TTL Gate +100 pF

• Output reference levels : 1.5 V, 1.5 V

Read Cycle 1 (2.7

≤ V

CC

< 4.5 V)

HN58V65AI/HN58V66AI

HN58V65A-SR/HN58V66A-SR

-10

Parameter

Symbol

Min

Max

Unit Test conditions

Address to output delay

tACC



100

ns

CE = OE = V

IL, WE = VIH

CE to output delay

tCE



100

ns

OE = V

IL, WE = VIH

OE to output delay

tOE

10

50

ns

CE = V

IL, WE = VIH

Address to output hold

tOH

0



ns

CE = OE = V

IL, WE = VIH

OE (CE) high to output float*1 t

DF

0

40

ns

CE = V

IL, WE = VIH

RES low to output float*1, 2

tDFR

0

350

ns

CE = OE = V

IL, WE = VIH

RES to output delay*2

tRR

0

450

ns

CE = OE= V

IL, WE = VIH

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HN58V66AT-10SRE Datasheet(PDF) 7 Page - Renesas Technology Corp

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