Transistors

1

Publication date: October 2004

SJC00295BED

MSG43001

SiGe HBT type

For low-noise RF amplifier

■ Features

• Compatible between high breakdown voltage and high cutoff fre-

quency

• Low-noise, high-gain amplification

• Suitable for high-density mounting and downsizing of the equip-

ment for Ultraminiature leadless package

0.6 mm

× 1.0 mm (height 0.39 mm)

■ Absolute Maximum Ratings T

a

= 25°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Collector-base cutoff current (Emitter open)

= 9 V, I

E

= 01

µA

Collector-emitter cutoff current (Base open)

µA

Emitter-base cutoff current (Collector open)

µA

Forward current transfer ratio

= 3 V, I

C

= 3 mA

100

220



Transition frequency

19

GHz

Forward transfer gain

S

2

9.0

11.0

dB

Noise figure

NF

= 3 V, I

C

= 3 mA, f = 2 GHz

1.4

2.0

dB

Collector output capacitance

0.3

0.6

pF

(Common base, input open circuited)

■ Electrical Characteristics T

a

= 25°C ± 3°C

Unit: mm

Parameter

Symbol

Rating

Unit

Collector-base voltage (Emitter open)

9V

Collector-emitter voltage (Base open)

6V

Emitter-base voltage (Collector open)

1V

Collector current

30

mA

Collector power dissipation*

100

mW

Junction temperature

125

°C

Storage temperature

−55 to +125

°C

Marking Symbol: 3N

1: Base

2: Emitter

3: Collector

ML3-N2 Package

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

× 12

mm

× 0.8 mm.

2

1

3

0.39

+0.01

−0.03

2

1

3