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SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 - JANUARY 1996
FEATURES
*
60Volt V
DS
*R
DS(ON) = 5Ω
PARTMARKING DETAIL – MV
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Drain-Source Voltage
VDS
60
V
Continuous Drain Current at Tamb=25°C
ID
0.15
mA
Pulsed Drain Current
IDM
3A
Gate Source Voltage
VGS
± 20
V
Power Dissipation at Tamb=25°C
Ptot
330
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN. TYP.
MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BVDSS
60
90
V
ID=100µA, VGS=0V
Gate-Source Threshold
Voltage
VGS(th)
0.8
3
V
ID=1mA, VDS= VGS
Gate-Body Leakage
IGSS
10
nA
VGS=15V, VDS=0V
Zero Gate Voltage Drain
Current
IDSS
0.5
µA
VDS=25V, VGS=0V
Static Drain-Source On-State
Resistance (1)
RDS(on)
5
Ω
VGS=10V, ID=200mA
Forward Transconductance
(1)(2)
gfs
200
mS
VDS=10V, ID=200mA
Input Capacitance (2)
Ciss
60
pF
VDS=10V, VGS=0V,
f=1MHz
Turn-On Delay Time (2)(3)
td(on)
10
ns
VDD ≈-15V, ID=600mA
Turn-Off Delay Time (2)(3)
td(off)
10
ns
(1) Measured under pulsed conditions. Width=300
µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50
Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
For typical characteristics graphs refer to ZVN3306F datasheet.
BS170F
D
G
S
SOT23
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