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2N111 Datasheet(PDF) 2 Page - Fairchild Semiconductor

Part No. 2N111
Description  Integrated N-Channel PowerTrench MOSFET and Schottky Diode
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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 2 page
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FDFM2N111 Rev. C2 (W)
2
Electrical Characteristics T
A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
ID = 250µA, VGS = 0V
20
-
-
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA,
Referenced to 25°C
-
12
-
mV/°C
IDSS
Zero Gate Voltage Drain Current
VGS = 0V, VDS = 16V
-
-
1
µA
IGSS
Gate-Body Leakage,
VGS = ±12V, VDS = 0V
-
-
±100
nA
On Characteristics
VGS(TH)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
0.6
1.0
1.5
V
∆VGS(TH)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = 250µA,
Referenced to 25°C
-
-3
-
mV/°C
RDS(ON)
Static Drain-Source On-Resistance
ID = 4.0A, VGS = 4.5V
-
54
100
m
ID = 3.3A, VGS = 2.5V
-
83
150
ID = 4.0A, VGS = 4.5V,
TJ = 125°C
-
74
147
ID(ON)
On-State Drain Current
VGS = 2.5V, VDS = 5V
10
-
-
A
gFS
Forward Transconductance
ID = 4A, VDS = 5V
-
9.7
-
S
(Note 2)
Dynamic Characteristics
CISS
Input Capacitance
VDS = 10V, VGS = 0V,
f = 1MHz
-
273
-
pF
COSS
Output Capacitance
-
63
-
pF
CRSS
Reverse Transfer Capacitance
-
37
-
pF
RG
Gate Resistance
VGS = 0V, f = 1MHz,
-
1.6
-
Switching Characteristics (Note 2)
td(ON)
Turn-On Delay Time
VDD = 10V, ID = 1A
VGS = 4.5V, RGEN = 6Ω
-
6
12
ns
tr
Turn-On Rise Time
-
7
14
ns
td(OFF)
Turn-Off Delay Time
-
11
20
ns
tf
Turn-Off Fall Time
-
1.7
3.4
ns
Qg
Total Gate Charge
VDS = 10V, ID = 4.0A,
VGS = 4.5V
-
2.7
3.8
nC
Qgs
Gate-Source Charge
-
0.6
-
nC
Qgd
Gate-Drain Charge
-
0.9
-
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
-
-
1.4
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 1.4 A (Note 2)
-
0.8
-1.2
V
trr
Diode Reverse Recovery Time
IF= 4.0A, dIF/dt=100A/µs
-
11
-
ns
Qrr
Diode Reverse Recovery Charge
-
3
-
nC
Schottky Diode Characteristic
VR
Reverse Voltage
IR = 1mA
20
-
-
V
IR
Reverse Leakage
VR = 5V
TJ = 25°C
-
-
100
µA
TJ = 100°C
10
mA
VF
Forward Voltage
IF = 1A
TJ = 25°C
-
0.32
0.39
V




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