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2N111 Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part No. 2N111
Description  Integrated N-Channel PowerTrench MOSFET and Schottky Diode
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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 1 page
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August 2005
©2005 Fairchild Semiconductor Corporation
FDFM2N111 Rev. C2 (W)
1
FDFM2N111
Integrated N-Channel PowerTrench® MOSFET and Schottky Diode
General Description
FDFM2N111 combines the exceptional performance of
Fairchild's PowerTrench MOSFET technology with a very
low forward voltage drop Schottky barrier rectifier in a
MicroFET package.
This device is designed specifically as a single package
solution for Standard Buck Converter. It features a fast
switching, low gate charge MOSFET with very low on-state
resistance.
Applications
Standard Buck Converter
Features
4 A, 20 V
RDS(ON) = 100mΩ @ VGS = 4.5 V
RDS(ON) = 150mΩ @ VGS = 2.5 V
Low Profile - 0.8 mm maximun - in the new package
MicroFET 3x3 mm
Absolute Maximum Ratings T
A = 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
20
V
VGSS
Gate-Source Voltage
±12
V
ID
Drain Current -Continuous
(Note 1a)
4
A
-Pulsed
10
VRRM
Schottky Repetitive Peak Reverse voltage
20
V
IO
Schottky Average Forward Current
(Note 1a)
2
A
PD
Power dissipation (Steady State)
(Note 1a)
Power dissipation (Steady State)
(Note 1b)
1.7
W
0.8
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 to +150
oC
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
70
oC/W
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
150
oC/W
Device Marking
Device
Reel Size
Tape Width
Quantity
2N111
FDFM2N111
7inch
12mm
3000 units
5
1
6
2
3
4
MLP 3x3
TOP
BOTTOM
A
A
S/C
S/C G
D
PIN 1
A
S/C
D
A
S/C
G
C
D




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