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2N111 Datasheet(PDF) 5 Page - Fairchild Semiconductor

Part No. 2N111
Description  Integrated N-Channel PowerTrench MOSFET and Schottky Diode
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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 5 page
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FDFM2N111 Rev. C2(W)
5
Figure 7.
0
1
2
3
4
5
6
01
23
4
Qg, GATE CHARGE (nC)
ID = 4A
VDS = 5V
15V
10V
Gate Charge Characteristics
Figure 8.
0
50
100
150
200
250
300
350
400
0
4
8
12
16
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
Ciss
Crss
Coss
f = 1MHz
VGS = 0 V
Capacitance Characteristics
Figure 9.
0.001
0.01
0.1
1
10
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
VF, FORWARD VOLTAGE (V)
TJ = 25
oC
TJ = 125
oC
Schottky Diode Forward Voltage
Figure 10.
0.000001
0.00001
0.0001
0.001
0.01
0.1
0
5
10
15
20
VR, REVERSE VOLTAGE (V)
TJ = 25
oC
TJ = 125
oC
TJ = 100
oC
Schottky Diode Reverse Current
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
Typical Characteristics




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