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2N111 Datasheet(PDF) 4 Page - Fairchild Semiconductor

Part No. 2N111
Description  Integrated N-Channel PowerTrench MOSFET and Schottky Diode
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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 4 page
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FDFM2N111 Rev. C2 (W)
4
Typical Characteristics
Figure 1.
0
2
4
6
8
10
00.511.52
2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
2.5V
2.0V
VGS = 4.5V
3.0V
3.5V
On-Region Characteristics
Figure 2.
0.8
1
1.2
1.4
1.6
1.8
2
02
468
10
ID, DRAIN CURRENT (A)
VGS = 2.5V
4.0V
3.5V
4.5V
3.0V
On-Resistance Variation with
Drain Current and Gate Voltage
Figure 3.
0.6
0.8
1
1.2
1.4
1.6
-50
-25
0
255075
100
125
150
TJ, JUNCTION TEMPERATURE (
oC)
ID = 4A
VGS = 4.5V
On-Resistance Variation with
Temperature
Figure 4.
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
1.5
2
2.5
3
3.5
4
4.5
5
VGS, GATE TO SOURCE VOLTAGE (V)
ID = 2A
TA = 125
oC
TA = 25
oC
On-Resistance Variation with
Gate-to-Source Voltage
Figure 5. Transfer Characteristics
0
2
4
6
8
10
0.511.522.5
3
VGS, GATE TO SOURCE VOLTAGE (V)
TA = -55
oC
25oC
125oC
VDS = 5V
Figure 6.
0.0001
0.001
0.01
0.1
1
10
100
0.2
0.4
0.6
0.8
1
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
TA = 125
oC
25
oC
-55
oC
VGS = 0V
Body Diode Forward Voltage Variation
with Source Current and Temperature




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