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KM68V1000BLG-7 Datasheet(PDF) 2 Page - Samsung semiconductor |
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KM68V1000BLG-7 Datasheet(HTML) 2 Page - Samsung semiconductor |
2 / 10 page KM68V1000B, KM68U1000B Family CMOS SRAM Revision 2.0 March 1998 128K x8 bit Low Power and Low Voltage CMOS Static RAM GENERAL DESCRIPTION The KM68V1000B and KM68U1000B families are fabricated by SAMSUNG ′s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current. FEATURES • Process Technology : Poly Load • Organization : 128Kx8 • Power Supply Voltage : KM68V1000B family : 3.0~3.6V KM68U1000B family : 2.7~3.3V • Low Data Retention Voltage : 2V(Min) • Three state output and TTL Compatible • Package Type : 32-SOP, 32-TSOP1-0820F/R Name Function CS1,CS2 Chip Select Inputs OE Output Enable Input WE Write Enable Input A0~A16 Address Inputs I/O1~I/O8 Data Inputs/Outputs Vcc Power Vss Ground N.C No Connection PRODUCT FAMILY 1. The parameter is measured with 30pF test load. Product Family Operating Temperature Vcc Range Speed(ns) Power Dissipation PKG Type Standby (ISB1, Max) Operating (ICC2, Max) KM68V1000BL/L-L Commercial(0~70 °C) 3.0~3.6V 701)/100 50/15 µA 50/15 µA 40mA 32-SOP 32-TSOP1- R/F KM68U1000BL/L-L 2.7~3.3V 100 KM68V1000BLE/LE-L Extended(-25~85 °C) 3.0~3.6V 701)/100 100/20 µA 50/15 µA KM68U1000BLE/LE-L 2.7~3.3V 100 KM68V1000BLI/LI-L Industrial(-40~85 °C) 3.0~3.6V 701)/100 100/20 µA 50/15 µA KM68U1000BLI/LI-L 2.7~3.3V 100 FUNCTIONAL BLOCK DIAGRAM PIN DESCRIPTION 32-TSOP Type 1 - Reverse A11 A9 A8 A13 WE CS2 A15 VCC NC A16 A14 A12 A7 A6 A5 A4 OE A10 CS1 I/O8 I/O7 I/O6 I/O5 I/O4 VSS I/O3 I/O2 I/O1 A0 A1 A2 A3 Type 1 - Forward 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 N.C A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O3 VSS VCC A15 CS2 WE A13 A8 A9 A11 OE A10 CS1 I/O8 I/O7 I/O6 I/O5 I/O4 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32-SOP A11 A9 A8 A13 WE CS2 A15 VCC NC A16 A14 A12 A7 A6 A5 A4 OE A10 CS1 I/O8 I/O7 I/O6 I/O5 I/O4 VSS I/O3 I/O2 I/O1 A0 A1 A2 A3 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32-TSOP SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice. A11 Precharge circuit. Memory array 512 rows 256 ×8 columns I/O Circuit Column select Clk gen. Row select A0 A1 A2 A3 A8 A10 A9 A4 A5 A6 A7 A12 A13 A15 CS1 CS2 WE I/O1 Data cont Data cont OE I/O8 A14 Control Logic A16 |
Similar Part No. - KM68V1000BLG-7 |
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Similar Description - KM68V1000BLG-7 |
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