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PDTD123E Datasheet(PDF) 5 Page - NXP Semiconductors |
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PDTD123E Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 10 page 9397 750 14582 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 8 April 2005 5 of 10 Philips Semiconductors PDTD123E series NPN 500 mA resistor-equipped transistors; R1 = 2.2 k Ω, R2 = 2.2 kΩ VCE = 5 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −40 °C IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −40 °C Fig 1. DC current gain as a function of collector current; typical values Fig 2. Collector-emitter saturation voltage as a function of collector current; typical values VCE = 0.3 V (1) Tamb = −40 °C (2) Tamb = 25 °C (3) Tamb = 100 °C VCE = 5 V (1) Tamb = −40 °C (2) Tamb = 25 °C (3) Tamb = 100 °C Fig 3. On-state input voltage as a function of collector current; typical values Fig 4. Off-state input voltage as a function of collector current; typical values 006aaa318 10 1 102 103 hFE 10−1 IC (mA) 10−1 103 102 110 (1) (2) (3) (1) (2) 006aaa319 IC (mA) 1102 10 10−1 VCEsat (V) 10−2 (3) 006aaa320 IC (mA) 10−1 103 102 110 1 10 VI(on) (V) 10−1 (1) (2) (3) IC (mA) 10−1 10 1 006aaa321 1 10 VI(off) (V) 10−1 (1) (2) (3) |
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