PDTD123E datasheet(5/10 Pages) PHILIPS

Part #	PDTD123E

Description	NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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5 / 10 page

9397 750 14582

Product data sheet

Rev. 01 — 8 April 2005

5 of 10

Philips Semiconductors

PDTD123E series

NPN 500 mA resistor-equipped transistors; R1 = 2.2 k

Ω, R2 = 2.2 kΩ

VCE = 5 V

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = −40 °C

IC/IB = 20

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = −40 °C

Fig 1.

DC current gain as a function of collector

current; typical values

Fig 2.

Collector-emitter saturation voltage as a

function of collector current; typical values

VCE = 0.3 V

(1) Tamb = −40 °C

(2) Tamb = 25 °C

(3) Tamb = 100 °C

VCE = 5 V

(1) Tamb = −40 °C

(2) Tamb = 25 °C

(3) Tamb = 100 °C

Fig 3.

On-state input voltage as a function of collector

current; typical values

Fig 4.

Off-state input voltage as a function of collector

current; typical values

006aaa318

10

1

102

103

hFE

10−1

IC (mA)

10−1

103

102

110

(1)

(2)

(3)

(1)

(2)

006aaa319

IC (mA)

1102

10

10−1

VCEsat

(V)

10−2

(3)

006aaa320

IC (mA)

10−1

103

102

110

1

10

VI(on)

(V)

10−1

(1)

(2)

(3)

IC (mA)

10−1

10

1

006aaa321

1

10

VI(off)

(V)

10−1

(1)

(2)

(3)

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