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HM51W16165LJ-7 Datasheet(PDF) 9 Page - Hitachi Semiconductor |
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HM51W16165LJ-7 Datasheet(HTML) 9 Page - Hitachi Semiconductor |
9 / 36 page HM51W16165 Series, HM51W18165 Series 9 DC Characteristics (Ta = 0 to +70 °C, V CC = 3.3 V ± 0.3 V, VSS = 0 V) (HM51W18165 Series) HM51W18165 -5 -6 -7 Parameter Symbol Min Max Min Max Min Max Unit Test conditions Operating current* 1, *2 I CC1 — 190 — 170 — 150 mA t RC = min Standby current I CC2 — 2 — 2 — 2 mA TTL interface RAS, UCAS, LCAS = V IH Dout = High-Z — 1 — 1 — 1 mA CMOS interface RAS, UCAS, LCAS ≥ V CC – 0.2 V Dout = High-Z Standby current (L-version) I CC2 — 150 — 150 — 150 µA CMOS interface RAS, UCAS, LCAS ≥ V CC – 0.2 V Dout = High-Z RAS-only refresh current*2 I CC3 — 190 — 170 — 150 mA t RC = min Standby current* 1 I CC5 —5 —5 — 5 mA RAS = V IH UCAS, LCAS = V IL Dout = enable CAS-before-RAS refresh current I CC6 — 190 — 170 — 150 mA t RC = min EDO page mode current* 1, *3 I CC7 — 185 — 165 — 145 mA t HPC = min Battery backup current* 4 (Standby with CBR refresh) (L-version) I CC10 — 400 — 400 — 400 µA CMOS interface Dout = High-Z CBR refresh: t RC = 125 µs t RAS ≤ 0.3 µs Self refresh mode current (L-version) I CC11 — 250 — 250 — 250 µA CMOS interface RAS, UCAS, LCAS ≤ 0.2 V Dout = High-Z Input leakage current I LI –10 10 –10 10 –10 10 µA 0 V ≤ Vin ≤ 4.6 V Output leakage current I LO –10 10 –10 10 –10 10 µA 0 V ≤ Vout ≤ 4.6 V Dout = disable Output high voltage V OH 2.4 V CC 2.4 V CC 2.4 V CC V High Iout = –2 mA Output low voltage V OL 0 0.4 0 0.4 0 0.4 V Low Iout = 2 mA Notes: 1. I CC depends on output load condition when the device is selected. I CC max is specified at the output open condition. 2. Address can be changed once or less while RAS = V IL. 3. Address can be changed once or less while UCAS and LCAS = V IH. 4. V IH ≥ VCC – 0.2 V, 0 V ≤ VIL ≤ 0.2 V. This Material Copyrighted By Its Respective Manufacturer |
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