M470L2923BNV0-CB3 datasheet(10/20 Pages) SAMSUNG

Part #	M470L2923BNV0-CB3

Description	DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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DDR SDRAM

256MB, 512MB, 1GB Unbuffered SODIMM

Rev. 1.5 June 2005

(VDD=2.7V, T = 10°C)

* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.

Symbol

CC(DDR400@CL=3) B3(DDR333@CL=2.5) A2(DDR266@CL=2) B0(DDR266@CL=2.5)

Unit

Notes

IDD0

660

500

440

mA

IDD1

760

620

560

mA

IDD2P

202020

20

mA

IDD2F

120

mA

IDD2Q

100

80

mA

IDD3P

220

120

mA

IDD3N

400

200

mA

IDD4R

920

780

680

mA

IDD4W

1,120

860

760

mA

IDD5

1,060

1,000

960

mA

IDD6

Normal

202020

20

mA

Low power

12

mA

Optional

IDD7A

1,800

1,620

1,440

mA

(VDD=2.7V, T = 10°C)

* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.

Symbol

CC(DDR400@CL=3) B3(DDR333@CL=2.5) A2(DDR266@CL=2) B0(DDR266@CL=2.5)

Unit

Notes

IDD0

1,060

700

640

mA

IDD1

1,160

820

760

mA

IDD2P

404040

40

mA

IDD2F

240

mA

IDD2Q

200

160

mA

IDD3P

440

240

mA

IDD3N

800

400

mA

IDD4R

1,320

980

880

mA

IDD4W

1,520

1,060

960

mA

IDD5

1,460

1,200

1,160

mA

IDD6

Normal

404040

40

mA

Low power

24

mA

Optional

IDD7A

2,200

1,820

1,640

mA

9.1 M470L3324BT(U)0 [ (32M x 64) 256MB Module ]

9.2 M470L6524BT(U)0 [ (64M x 64) 512MB Module ]

9.0 DDR SDRAM IDD spec table

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