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IL440-4X009 Datasheet(PDF) 2 Page - Vishay Siliconix |
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IL440-4X009 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 5 page www.vishay.com 2 Document Number 83631 Rev. 1.5, 26-Oct-04 VISHAY IL440 Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Output Coupler Parameter Test condition Symbol Value Unit Reverse voltage VR 5.0 V Forward current IF 60 mA Surge current P.W. < 10 µsI FSM 3.0 A Power dissipation Pdiss 100 mW Junction temperature Tj 100 °C Parameter Test condition Part Symbol Value Unit Peak off-state voltage IL440-1 VDRM 600 V IL440-2 VDRM 600 V IL440-3 VDRM 600 V IL440-4 VDRM 400 V IL440-5 VDRM 400 V IL440-6 VDRM 400 V On-state RMS current ID(RMS) 100 mA Peak surge current tp ≤ 10 ms IFSM 1.2 A Peak on-state current tp/T = 0.01 ≤ 100 µsIDRM 2.0 A Power dissipation Pdiss 300 mW Junction temperature Tj 125 °C Parameter Test condition Symbol Value Unit Isolation voltage, 1.0 sec., per Standard Climate 23 °C/50 % RH, DIN 50014 VISO 5300 VRMS Creepage ≥ 7.0 mm Clearance ≥ 7.0 mm Isolation resistance VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω Total power dissipation Ptot 330 mW Storage temperature range Tstg - 55 to + 125 °C Ambient temperature Tamb - 40 to + 100 °C Junction temperature Tj 100 °C Lead soldering temperature 2.0 mm from case, t < 10 s Tsld 260 °C |
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