©2005 Fairchild Semiconductor Corporation

1

www.fairchildsemi.com

March 2005

RMPA2458 Rev. C

RMPA2458

2.4–2.5 GHz InGaP HBT Low Current Linear Power Amplifier

Features

■ 31.5dB small signal gain

■ 27dBm output power @ 1dB compression

■ 103mA total current at 19dBm modulated power out

■ 2.5% EVM at 19 dBm modulated power out

■ 3.3V collector supply operation

■ 2.9V mirror supply operation

■ Power saving shutdown options (bias control)

■ Integrated power detector with 20dB dynamic range

■ Lead-free RoHS compliant 3 x 3 x 0.9mm leadless package

■ Internally matched to 50 Ohms and DC blocked RF input/

output

■ Optimized for use in 802.11b/g applications

General Description

The

RMPA2458

power

amplifier

is

designed

for

high

performance WLAN applications in the 2.4–2.5 GHz frequency

band. The low profile 16 pin 3 x 3 x 0.9 mm package with internal

matching on both input and output to 50 Ohms minimizes next

level PCB space and allows for simplified integration. The on-

chip detector provides power sensing capability while the bias

control provides power saving shutdown capability. The PA’s

industry leading low power consumption and excellent linearity

are achieved using our InGaP Heterojunction Bipolar Transistor

(HBT) technology.

Device

(176 µs burst time, 100 µs idle time) 54 Mbps Data Rate, 16.7 MHz Bandwidth

Notes:

2. Percentage includes system noise floor of EVM = 0.8%.

Parameter

Min

Typ

Max

Units

Frequency

2.4

2.5

GHz

Collector Supply Voltage

3.0

3.3

3.6

V

Mirror Supply Voltage

2.9

V

Mirror Supply Current

3.3

mA

Gain

31.5

dB

103

mA

2

2.5

%

340

mV

5

dBm

Preliminary