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PESD5V0L7BS Datasheet(PDF) 5 Page - NXP Semiconductors |
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PESD5V0L7BS Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 14 page 9397 750 13705 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 02 — 25 November 2004 5 of 14 Philips Semiconductors PESD5V0L7BAS; PESD5V0L7BS Low capacitance 7-fold bidirectional ESD protection diode arrays 6. Characteristics [1] Non-repetitive current pulse 8/20 µs exponentially decaying waveform according to IEC61000-4-5; see Figure 1. Table 9: Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per diode VRWM reverse stand-off voltage - - 5 V IRM reverse leakage current VRWM = 5 V; see Figure 6 - 3 25 nA V(CL)R clamping voltage Ipp = 1 A [1] - - 11 V Ipp = 2.5 A [1] - - 17 V V(BR) breakdown voltage IR = 1 mA 7.2 7.6 7.9 V rdif differential resistance IR = 1 mA - - 100 Ω Cd diode capacitance VR = 0 V; f = 1 MHz; see Figure 5 - 8 10 pF |
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