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K4S64323LH-HE60 Datasheet(PDF) 1 Page - Samsung semiconductor |
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K4S64323LH-HE60 Datasheet(HTML) 1 Page - Samsung semiconductor |
1 / 12 page K4S64323LH - F(H)E/N/G/C/L/F February 2004 Mobile-SDRAM • 2.5V power supply. • LVCMOS compatible with multiplexed address. • Four banks operation. • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). • EMRS cycle with address key programs. • All inputs are sampled at the positive going edge of the system clock. • Burst read single-bit write operation. • Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature Compensated Self Refresh) • DQM for masking. • Auto refresh. • 64ms refresh period (4K cycle). • Commercial Temperature Operation (-25 °C ~ 70°C). • Extended Temperature Operation (-25 °C ~ 85°C). • 90Balls FBGA with 0.8mm ball pitch ( -FXXX : Leaded, -HXXX : Lead Free). FEATURES The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technol- ogy. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high per- formance memory system applications. GENERAL DESCRIPTION ORDERING INFORMATION - F(H)E/N/G : Normal/Low/Low Power, Extended Temperature(-25 °C ~ 85°C) - F(H)C/L/F : Normal/Low/Low Power, Commercial Temperature(-25 °C ~ 70°C) NOTES : 1. In case of 40MHz Frequency, CL1 can be supported. 2. Samsung are not designed or manufactured for use in a device or system that is used under circumstance in which human life is potentially at stake. Please contact to the memory marketing team in samsung electronics when considering the use of a product contained herein for any specific purpose, such as medical, aerospace, nuclear, military, vehicular or undersea repeater use. Part No. Max Freq. Interface Package K4S64323LH-F(H)E/N/G/C/L/F60 166MHz(CL=3) LVCMOS 90 FBGA Leaded (Lead Free) K4S64323LH-F(H)E/N/G/C/L/F75 133MHz(CL=3) K4S64323LH-F(H)E/N/G/C/L/F1H 105MHz(CL=2) K4S64323LH-F(H)E/N/G/C/L/F1L 105MHz(CL=3)*1 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
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