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K6R4008V1D-UC08 Datasheet(PDF) 8 Page - Samsung semiconductor |
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K6R4008V1D-UC08 Datasheet(HTML) 8 Page - Samsung semiconductor |
8 / 12 page K6R4016C1D CMOS SRAM PRELIMPreliminaryPPPPPPPPPINARY Rev 2.0 - 8 - June 2003 NOTES (READ CYCLE) 1. WE is high for read cycle. 2. All read cycle timing is referenced from the last valid address to the first transition address. 3. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit condition and are not referenced to VOH or VOL levels. 4. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ (Min.) both for a given device and from device to device. 5. Transition is measured ±200mV from steady state voltage with Load(B). This parameter is sampled and not 100% tested. 6. Device is continuously selected with CS=VIL. 7. Address valid prior to coincident with CS transition low. 8. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle. TIMING WAVEFORM OF WRITE CYCLE(1) (OEClock) Address CS UB, LB WE Data in Data out tWC tCW(3) tBW tWP(2) tAS(4) tDH tDW tOHZ(6) High-Z High-Z Valid Data OE tAW tWR(5) TIMING WAVEFORM OF WRITE CYCLE(2) (OE=Low fixed) Address CS UB, LB WE Data in Data out tWC tCW(3) tBW tWP1(2) tDH tDW tWR(5) tAS(4) tOW tWHZ(6) (10) (9) High-Z Valid Data tAW High-Z |
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