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 SAMSUNG
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4 page 
K4S64323LH - F(H)E/N/G/C/L/F February 2004 Mobile-SDRAM DC OPERATING CONDITIONS Recommended operating conditions (Voltage referenced to VSS = 0V, TA = -25 to 85 °C for Extended, -25 to 70°C for Commercial) NOTES : 1. Samsung can support VDDQ 2.5V(in general case) and 1.8V(in specific case) for VDD 2.5V products. Please contact to the memory marketing team in Samsung Electronics when considering the use of VDDQ 1.8V(Min 1.65V). 2. VIH (max) = 3.0V AC.The overshoot voltage duration is ≤ 3ns. 3. VIL (min) = -1.0V AC. The undershoot voltage duration is ≤ 3ns. 4. Any input 0V ≤ VIN ≤ VDDQ. Input leakage currents include Hi-Z output leakage for all bi-directional buffers with tri-state outputs. 5. Dout is disabled, 0V ≤ VOUT ≤ VDDQ. Parameter Symbol Min Typ Max Unit Note Supply voltage VDD 2.3 2.5 2.7 V VDDQ 2.3 2.5 2.7 V 1.65 - 2.7 V 1 Input logic high voltage VIH 0.8 x VDDQ - VDDQ + 0.3 V 2 Input logic low voltage VIL -0.3 0 0.3 V 3 Output logic high voltage VOH VDDQ -0.2 - - V IOH = -0.1mA Output logic low voltage VOL - - 0.2 V IOL = 0.1mA Input leakage current ILI -10 - 10 uA 4 CAPACITANCE (VDD = 2.5V, TA = 23°C, f = 1MHz, VREF =0.9V ± 50 mV) Pin Symbol Min Max Unit Note Clock CCLK - 4.0 pF RAS, CAS, WE, CS, CKE CIN - 4.0 pF DQM CIN - 4.0 pF Address CADD - 4.0 pF DQ0 ~ DQ31 COUT - 6.0 pF ABSOLUTE MAXIMUM RATINGS NOTES: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability. Parameter Symbol Value Unit Voltage on any pin relative to Vss VIN, VOUT -1.0 ~ 3.6 V Voltage on VDD supply relative to Vss VDD, VDDQ -1.0 ~ 3.6 V Storage temperature TSTG -55 ~ +150 °C Power dissipation PD 1.0 W Short circuit current IOS 50 mA |
