NTJD4001N

http://onsemi.com

2

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

30

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

56

mV/

°C

Zero Gate Voltage Drain Current

1.0

µA

Gate−to−Source Leakage Current

±1.0

µA

Gate Threshold Voltage

0.8

1.2

1.5

V

Gate Threshold Temperature

Coefficient

−3.2

mV/

°C

Drain−to−Source On Resistance

1.0

1.5

Ω

()

1.5

2.5

Forward Transconductance

80

mS

CHARGES AND CAPACITANCES

Input Capacitance

V

50V

20

33

pF

Output Capacitance

19

32

Reverse Transfer Capacitance

7.25

12

Total Gate Charge

I

01A

0.9

1.3

nC

Threshold Gate Charge

0.2

Gate−to−Source Charge

0.3

Gate−to−Drain Charge

0.2

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

I

10 mA R

50

Ω

17

ns

Rise Time

tr

23

Turn−Off Delay Time

94

Fall Time

tf

82

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

I

10 mA

0.65

0.7

V

0.45

Reverse Recovery Time

12.4

ns

2. Pulse Test: pulse width

≤ 300 µs, duty cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperatures.