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DAM200N40G Datasheet(PDF) 1 Page - DACO SEMICONDUCTOR CO.,LTD. |
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DAM200N40G Datasheet(HTML) 1 Page - DACO SEMICONDUCTOR CO.,LTD. |
1 / 4 page N-Channel Enhancement Mode MOSFET Features VDSS = 40V RDS(ON) Typ.1.1mΩ @ VGS = 10V Fully Avalanche Rated Pb Free & RoHS Compliant Applications Backlighting Synchronous Rectifiers Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Parameter Symbol Ratings Unit Drain Source Voltage VDS 40 V Gate Source Voltage VGS ±20 V Drain Current Continuous @ Tc = 25°C ID 200 A @ Tc = 100°C 130 Drain Current Pulsed@ TC = 25°C IDM 800 A Single Pulse Avalanche Energy EAS 450 mJ Single Pulse Avalanche Current IAS 30 A Maximum Power Dissipation PD 92.6 W Storage Temperature Range TSTG -50 to +150 °C Operating Junction Temperature Range TJ -50 to +150 °C Thermal Resistance Junction to Case R θJc 1.35 °C/W Feb.2018 DAM200N40G Note3 |
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