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DS1330ABP-100 Datasheet(PDF) 4 Page - Dallas Semiconductor

Part # DS1330ABP-100
Description  256k Nonvolatile SRAM with Battery Monitor
Download  11 Pages
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Manufacturer  DALLAS [Dallas Semiconductor]
Direct Link  https://www.maximintegrated.com/en.html
Logo DALLAS - Dallas Semiconductor

DS1330ABP-100 Datasheet(HTML) 4 Page - Dallas Semiconductor

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DS1330Y/AB
4 of 11
CAPACITANCE
(
tA = 25
°C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS NOTES
Input Capacitance
CIN
510
pF
Input/Output Capacitance
CI/O
510
pF
AC ELECTRICAL
(VCC = 5V
± 5% for DS1330AB)
CHARACTERISTICS
(tA: See Note 10) (VCC = 5V
± 10% for DS1330Y)
DS1330AB-70
DS1330Y-70
DS1330AB-100
DS1330Y-100
PARAMETER
SYMBOL
MIN
MAX
MIN
MAX
UNITS NOTES
Read Cycle Time
tRC
70
100
ns
Access Time
tACC
70
100
ns
OE
to Output Valid
tOE
45
50
ns
CE
to Output Valid
tCO
70
100
ns
OE
or CE to Output Active
tCOE
5
5
ns
5
Output High Z from Deselection
tOD
25
35
ns
5
Output Hold from Address
Change
tOH
55
ns
Write Cycle Time
tWC
70
100
ns
Write Pulse Width
tWP
55
75
ns
3
Address Setup Time
tAW
00
ns
Write Recovery Time
tWR1
tWR2
5
12
5
12
ns
12
13
Output High Z from WE
tODW
25
35
ns
5
Output Active from WE
tOEW
5
5
ns
5
Data Setup Time
tDS
30
40
ns
4
Data Hold Time
tDH1
tDH2
0
7
0
7
ns
12
13
READ CYCLE
SEE NOTE 1


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