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2N1616 Datasheet(PDF) 2 Page - Seme LAB

Part No. 2N1616
Description  NPN SILICON TRANSISTOR
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Maker  SEME-LAB [Seme LAB]
Homepage  http://www.semelab.co.uk
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2N1616
Parameter
Test Conditions
Min.
Typ.
Max. Units
ICBO
Collector-Base cut-off current
Tcase = 150°C
VCB = 60V
IE = 0
10
mA
ICEX
Collector-Emitter cut-off current
VCB = 60V
VBE = -1V
1
IEBO
Emitter-Base cut-off current
VEB = 8V
IC = 0
1
V(BR)CEO* Collector-Emitter Breakdown Voltage
IC = 100mA
IB = 0
60
V
V(BR)EBO* Emitter-Base Breakdown Voltage
IB = 1mA
IC = 0
8
V(BR)CBO* Collector-Base Breakdown Voltage
IC = 1mA
IE = 0
60
h21E
Static Forward Current Transfer Ratio
VCE = 12V
IC = 2A
15
75
-
VCEsat
Collector-Emitter Saturation Voltage
IC = 2A
IB = 250mA
2
V
VBE
Base
-Emitter Voltage
VCE = 12V
IC = 2A
3
fT
Transition Frequency (f=1MHz)
VCE = 30V
IC = 300mA
3
MHz
Rth(J-C) Thermal Resistance (junction to case)
1.75
°C/W
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Website: http://www.semelab.co.uk
Document Number 5643
Issue 1
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
* Pulse test tp = 300µs , δ ≤ 2%




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