Philips Semiconductors

BUK72150-55A

TrenchMOS™ standard level FET

Product data

Rev. 02 — 20 November 2003

3 of 12

9397 750 12335

© Koninklijke Philips Electronics N.V. 2003. All rights reserved.

Fig 1.

Normalized total power dissipation as a

function of mounting base temperature.

Fig 2.

Continuous drain current as a function of

mounting base temperature.

Fig 3.

Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

03na19

0

40

80

120

0

50

100

150

200

Tmb (°C)

Pder

(%)

03np26

0

4

8

12

0

50

100

150

200

Tmb (°C)

ID

(A)

P

der

P

tot

P

tot 25 C

°

()

-----------------------

100%

×

=

03np24

10-1

1

10

102

1

10

102

VDS (V)

ID

(A)

DC

100 ms

10 ms

Limit RDSon = VDS / ID

1 ms

tp = 10 µs

100

µs