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BUK9514-55A Datasheet(PDF) 8 Page - NXP Semiconductors |
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BUK9514-55A Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 15 page Philips Semiconductors BUK9514-55A; BUK9614-55A TrenchMOS™ logic level FET Product specification Rev. 01 — 7 Feb 2001 8 of 15 9397 750 07886 © Philips Electronics N.V. 2001. All rights reserved. VDS =25V Tj =25 °C; ID =25A Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values. Fig 14. Gate-source voltage as a function of turn-on gate charge; typical values. VGS =0V Fig 15. Reverse diode current as a function of reverse diode voltage; typical values. 03nd61 0 20 40 60 80 01 23 4 VGS (V) ID (A) Tj = 175 oC Tj = 25 oC 03nd59 0 1 2 3 4 5 020 40 60 QG (nC) VGS (V) VDD = 44V VDD = 14V 03nd58 0 20 40 60 80 100 0.0 0.5 1.0 1.5 VSD (V) IS (A) Tj = 175 oC Tj = 25 oC |
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