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BUK7624-55A Datasheet(PDF) 8 Page - NXP Semiconductors |
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BUK7624-55A Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 15 page Philips Semiconductors BUK7524-55A; BUK7624-55A TrenchMOS™ standard level FET Product specification Rev. 02 — 01 March 2001 8 of 15 9397 750 08029 © Philips Electronics N.V. 2001. All rights reserved. VDS =25V Tj =25 °C; ID =25A Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values. Fig 14. Gate-source voltage as a function of turn-on gate charge; typical values. VGS =0V Fig 15. Reverse diode current as a function of reverse diode voltage; typical values. 03nb69 0 20 40 60 80 024 68 10 VGS (V) ID (A) Tj = 175 OC Tj = 25 OC 03nb67 0 2 4 6 8 10 0 10203040 QG (nC) VGS (V) VDD = 44 V VDD = 14 V 03nb66 0 20 40 60 80 100 120 0.0 0.5 1.0 1.5 VSD (V) IS (A) Tj = 175 OC Tj = 25 OC |
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