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SI7445DP Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI7445DP Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 4 page Si7445DP Vishay Siliconix www.vishay.com 2 Document Number: 71626 S-31728—Rev. B, 18-Aug-03 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 mA - 0.45 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "8 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = - 16 V, VGS = 0 V -1 mA Zero Gate Voltage Drain Current IDSS VDS = - 16 V, VGS = 0 V, TJ = 70_C -10 mA On-State Drain Currenta ID(on) VDS v -5 V, VGS = - 4.5 V -40 A VGS = - 4.5 V, ID = - 19 A 0.0064 0.0077 Drain-Source On-State Resistancea rDS(on) VGS = - 2.5 V, ID = - 17 A 0.0078 0.0094 W DS(on) VGS = - 1.8 V, ID = - 10 A 0.0105 0.0125 Forward Transconductancea gfs VDS = - 15 V, ID = - 19 A 75 S Diode Forward Voltagea VSD IS = - 4.3 A, VGS = 0 V - 0.65 - 1.1 V Dynamicb Total Gate Charge Qg 92 140 Gate-Source Charge Qgs VDS = - 15 V, VGS = - 5 V, ID = - 19 A 19 nC Gate-Drain Charge Qgd 16.5 Gate-Resistance Rg 1 2 3.4 W Turn-On Delay Time td(on) 40 60 Rise Time tr VDD = - 15 V, RL = 15 W 45 65 Turn-Off Delay Time td(off) VDD = - 15 V, RL = 15 W ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W 400 600 ns Fall Time tf 190 290 Source-Drain Reverse Recovery Time trr IF = - 4.3 A, di/dt = 100 A/ms 50 80 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 10 20 30 40 50 0.0 0.5 1.0 1.5 2.0 0 10 20 30 40 50 0 2468 10 VGS = 5 thru 2 V 25 _C TC = 125_C -55 _C 1.5 V Output Characteristics Transfer Characteristics VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) |
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