Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

IC41LV1665-30TI Datasheet(PDF) 10 Page - Integrated Circuit Solution Inc

Part # IC41LV1665-30TI
Description  64K x16 bit Dynamic RAM with Fast Page Mode
Download  19 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  ICSI [Integrated Circuit Solution Inc]
Direct Link  http://www.icsi.com.tw
Logo ICSI - Integrated Circuit Solution Inc

IC41LV1665-30TI Datasheet(HTML) 10 Page - Integrated Circuit Solution Inc

Back Button IC41LV1665-30TI Datasheet HTML 6Page - Integrated Circuit Solution Inc IC41LV1665-30TI Datasheet HTML 7Page - Integrated Circuit Solution Inc IC41LV1665-30TI Datasheet HTML 8Page - Integrated Circuit Solution Inc IC41LV1665-30TI Datasheet HTML 9Page - Integrated Circuit Solution Inc IC41LV1665-30TI Datasheet HTML 10Page - Integrated Circuit Solution Inc IC41LV1665-30TI Datasheet HTML 11Page - Integrated Circuit Solution Inc IC41LV1665-30TI Datasheet HTML 12Page - Integrated Circuit Solution Inc IC41LV1665-30TI Datasheet HTML 13Page - Integrated Circuit Solution Inc IC41LV1665-30TI Datasheet HTML 14Page - Integrated Circuit Solution Inc Next Button
Zoom Inzoom in Zoom Outzoom out
 10 / 19 page
background image
IC41C1665
IC41LV1665
10
Integrated Circuit Solution Inc.
DR031-0A 10/17/2001
Notes:
1. An initial pause of 200 µs is required after power-up followed by eight
RAS refresh cycle (RAS-Only or CBR) before proper device
operation is assured. The eight
RAS cycles wake-up should be repeated any time the tREF refresh requirement is exceeded.
2. VIH (MIN) and VIL (MAX) are reference levels for measuring timing of input signals. Transition times, are measured between VIH
and VIL (or between VIL and VIH) and assume to be 1 ns for all inputs.
3. In addition to meeting the transition rate specification, all input signals must transit between VIH and VIL (or between VIL and VIH)
in a monotonic manner.
4. If
CAS and RAS = VIH, data output is High-Z.
5. If
CAS = VIL, data output may contain data from the last valid READ cycle.
6. Measured with a load equivalent to one TTL gate and 50 pF.
7. Assumes that tRCD
≤ tRCD (MAX). If tRCD is greater than the maximum recommended value shown in this table, tRAC will increase
by the amount that tRCD exceeds the value shown.
8. Assumes that tRCD
≥ tRCD (MAX).
9. If
CAS is LOW at the falling edge of RAS, data out will be maintained from the previous cycle. To initiate a new cycle and clear the
data output buffer,
CAS and RAS must be pulsed for tCP.
10. Operation with the tRCD (MAX) limit ensures that tRAC (MAX) can be met. tRCD (MAX) is specified as a reference point only; if tRCD
is greater than the specified tRCD (MAX) limit, access time is controlled exclusively by tCAC.
11. Operation within the tRAD (MAX) limit ensures that tRCD (MAX) can be met. tRAD (MAX) is specified as a reference point only; if tRAD
is greater than the specified tRAD (MAX) limit, access time is controlled exclusively by tAA.
12. Either tRCH or tRRH must be satisfied for a READ cycle.
13. tOFF (MAX) defines the time at which the output achieves the open circuit condition; it is not a reference to VOH or VOL.
14. tWCS, tRWD, tAWD and tCWD are restrictive operating parameters in LATE WRITE and READ-MODIFY-WRITE cycle only. If tWCS
≥ tWCS
(MIN), the cycle is an EARLY WRITE cycle and the data output will remain open circuit throughout the entire cycle. If tRWD
≥ tRWD
(MIN), tAWD
≥ tAWD (MIN) and tCWD ≥ tCWD (MIN), the cycle is a READ-WRITE cycle and the data output will contain data read from
the selected cell. If neither of the above conditions is met, the state of I/O (at access time and until
CAS and RAS or OE go back
to VIH) is indeterminate.
OE held HIGH and WE taken LOW after CAS goes LOW result in a LATE WRITE (OE-controlled) cycle.
15. Output parameter (I/O) is referenced to corresponding
CAS input, I/O0-I/O7 by LCAS and I/O8-I/O15 by UCAS.
16. During a READ cycle, if
OE is LOW then taken HIGH before CAS goes HIGH, I/O goes open. If OE is tied permanently LOW, a
LATE WRITE or READ-MODIFY-WRITE is not possible.
17. Write command is defined as
WE going low.
18. LATE WRITE and READ-MODIFY-WRITE cycles must have both tOD and tOEH met (
OE HIGH during WRITE cycle) in order to ensure
that the output buffers will be open during the WRITE cycle. The I/Os will provide the previously written data if
CAS remains LOW
and
OE is taken back to LOW after tOEH is met.
19. The I/Os are in open during READ cycles once tOD or tOFF occur.
20. The first
χCAS edge to transition LOW.
21. The last
χCAS edge to transition HIGH.
22. These parameters are referenced to
CAS leading edge in EARLY WRITE cycles and WE leading edge in LATE WRITE or READ-
MODIFY-WRITE cycles.
23. Last falling
χCAS edge to first rising χCAS edge.
24. Last rising
χCAS edge to next cycleÕs last rising χCAS edge.
25. Last rising
χCAS edge to first falling χCAS edge.
26. Each
χCAS must meet minimum pulse width.
27. Last
χCAS to go LOW.
28. I/Os controlled, regardless
UCAS and LCAS.
29. The 3 ns minimum is a parameter guaranteed by design.
30. Enables on-chip refresh and address counters.


Similar Part No. - IC41LV1665-30TI

ManufacturerPart #DatasheetDescription
logo
Integrated Circuit Solu...
IC41LV1664 ICSI-IC41LV1664 Datasheet
276Kb / 21P
   64K x 16 bit Dynamic RAM with EDO Page Mode
IC41LV1664-30K ICSI-IC41LV1664-30K Datasheet
276Kb / 21P
   64K x 16 bit Dynamic RAM with EDO Page Mode
IC41LV1664-30T ICSI-IC41LV1664-30T Datasheet
276Kb / 21P
   64K x 16 bit Dynamic RAM with EDO Page Mode
IC41LV1664-35K ICSI-IC41LV1664-35K Datasheet
276Kb / 21P
   64K x 16 bit Dynamic RAM with EDO Page Mode
IC41LV1664-35KI ICSI-IC41LV1664-35KI Datasheet
276Kb / 21P
   64K x 16 bit Dynamic RAM with EDO Page Mode
More results

Similar Description - IC41LV1665-30TI

ManufacturerPart #DatasheetDescription
logo
Samsung semiconductor
KM4164B SAMSUNG-KM4164B Datasheet
653Kb / 11P
   64K X 1 BIT DYNAMIC RAM WITH PAGE MODE
KM41464A SAMSUNG-KM41464A Datasheet
775Kb / 12P
   64K X 4 BIT DYNAMIC RAM WITH PAGE MODE
logo
Taiwan Memory Technolog...
T221160A TMT-T221160A Datasheet
134Kb / 14P
   64K x 16 DYNAMIC RAM FAST PAGE MODE
logo
List of Unclassifed Man...
GLT41116 ETC1-GLT41116 Datasheet
106Kb / 16P
   64k x 16 CMOS Dynamic RAM with Fast Page Mode
GLT41316 ETC-GLT41316 Datasheet
1Mb / 22P
   64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
logo
AMIC Technology
A416316B AMICC-A416316B Datasheet
418Kb / 25P
   64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
logo
Integrated Circuit Solu...
IC41SV4105 ICSI-IC41SV4105 Datasheet
300Kb / 17P
   1Mx4 bit Dynamic RAM with Fast Page Mode
IC41SV44052 ICSI-IC41SV44052 Datasheet
298Kb / 17P
   4Mx4 bit Dynamic RAM with Fast Page Mode
IC41C1664 ICSI-IC41C1664 Datasheet
276Kb / 21P
   64K x 16 bit Dynamic RAM with EDO Page Mode
IC41C44054 ICSI-IC41C44054 Datasheet
309Kb / 18P
   4Mx4 bit Dynamic RAM with Fast Page Mode
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com