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IC61LV256-10TG Datasheet(PDF) 7 Page - Integrated Circuit Solution Inc

Part # IC61LV256-10TG
Description  32K x 8 Hight Speed SRAM with 3.3V
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Manufacturer  ICSI [Integrated Circuit Solution Inc]
Direct Link  http://www.icsi.com.tw
Logo ICSI - Integrated Circuit Solution Inc

IC61LV256-10TG Datasheet(HTML) 7 Page - Integrated Circuit Solution Inc

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IC61LV256
Integrated Circuit Solution Inc.
7
AHSR027-0B
11/28/2003
AC WAVEFORMS
WRITE CYCLE NO. 1 (CE Controlled, OE is HIGH or LOW) (1 )
DATA UNDEFINED
t WC
VALID ADDRESS
t SCE
t PWE1
t PWE2
t AW
t HA
HIGH-Z
t HD
t SA
t HZWE
ADDRESS
CE
WE
DOUT
DIN
DATAIN VALID
t LZWE
t SD
WRITE CYCLE SWITCHING CHARACTERISTICS(1,2) (Over Operating Range)
-8 ns
-10 ns
-12 ns
-15 ns
Symbol Parameter
Min. Max.
Min. Max.
Min. Max.
Min. Max.
Unit
tWC
Write Cycle Time
8
10
12
15
ns
tSCE
CE to Write End
7
8
8
10
ns
tAW
Address Setup Time
7
8
8
10
ns
to Write End
tHA
Address Hold
0
0
0
0
ns
from Write End
tSA
Address Setup Time
0
0
0
0
ns
tPWE(4) WE Pulse Width
7
10
12
15
ns
tSD
Data Setup to Write End
4.5
5
6
7
ns
tHD
Data Hold from Write End
0
0
0
0
ns
tHZWE(3) WE LOW to High-Z Output
3.5
4
6
7
ns
tLZWE(3) WE HIGH to Low-Z Output
0
0
0
0
ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse
levels of 0 to 3.0V and output loading specified in Figure 1.
2. The internal write time is defined by the overlap of CE LOW and WE LOW. All signals must be in valid
states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold
timing are referenced to the rising or falling edge of the signal that terminates the Write.
3. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100%
tested.
4. Tested with OE HIGH.


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