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IC61LV12816-8BI Datasheet(PDF) 8 Page - Integrated Circuit Solution Inc

Part # IC61LV12816-8BI
Description  128K x 16 Hight Speed SRAM with 3.3V
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Manufacturer  ICSI [Integrated Circuit Solution Inc]
Direct Link  http://www.icsi.com.tw
Logo ICSI - Integrated Circuit Solution Inc

IC61LV12816-8BI Datasheet(HTML) 8 Page - Integrated Circuit Solution Inc

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IC61LV12816
8
Integrated Circuit Solution, Inc.
AHSR024-0B
04/23/2004
WRITE CYCLE SWITCHING CHARACTERISTICS(1,3) (Over Operating Range)
-8
-10
-12
-15
Symbol Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Unit
tWC
Write Cycle Time
8
10
12
15
ns
tSCE
CE to Write End
7
8
8
10
ns
tAW
Address Setup Time
7
8
8
10
ns
to Write End
tHA
Address Hold from Write End
0
0
0
0
ns
tSA
Address Setup Time
0
0
0
0
ns
tPWB
LB, UB Valid to End of Write
7
8
9
10
ns
tPWE(4)
WE Pulse Width
7
8
9
10
ns
tSD
Data Setup to Write End
4.5
5
6
7
ns
tHD
Data Hold from Write End
0
0
0
0
ns
tHZWE(2) WE LOW to High-Z Output
3
4
5
6
ns
tLZWE(2) WE HIGH to Low-Z Output
0
0
0
0
ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V
and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of CE LOW and UB or LB, and WE LOW. All signals must be in valid states to
initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the
rising or falling edge of the signal that terminates the write.
4.Tested with OE Hith.


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