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EN29LV400AT-45RTIP Datasheet(PDF) 1 Page - Eon Silicon Solution Inc. |
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EN29LV400AT-45RTIP Datasheet(HTML) 1 Page - Eon Silicon Solution Inc. |
1 / 41 page This Data Sheet may be revised by subsequent versions ©2005 Eon Silicon Solution, Inc., www.essi.com.tw or modifications due to changes in technical specifications. 1 EN29LV400A FEATURES EN29LV400A 4 Megabit (512K x 8-bit / 256K x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only • 3V, single power supply operation - Full voltage range: 2.7-3.6 volt read and write operations for battery-powered applications. - Regulated voltage range: 3.0-3.6 volt read and write operations for compatibility with high performance 3.3 volt microprocessors. • High performance - Access times as fast as 45 ns • Low power consumption (typical values at 5 MHz) - 7 mA typical active read current - 15 mA typical program/erase current - 1 µA typical standby current (standard access time to active mode) • Flexible Sector Architecture: - One 16 K-byte, two 8 K-byte, one 32 K-byte, and seven 64 K-byte sectors (byte mode) - One 8 K-word, two 4 K-word, one 16 K-word and seven 32 K-word sectors (word mode) • Sector protection: - Hardware locking of sectors to prevent program or erase operations within individual sectors - Additionally, temporary Sector Unprotect allows code changes in previously locked sectors. • High performance program/erase speed - Byte/Word program time: 8µs typical - Sector erase time: 500ms typical • JEDEC Standard Embedded Erase and Program Algorithms • JEDEC standard DATA# polling and toggle bits feature • Single Sector and Chip Erase • Sector Unprotect Mode • Erase Suspend / Resume modes: Read or program another Sector during Erase Suspend Mode • triple-metal double-poly triple-well CMOS Flash Technology • Low Vcc write inhibit < 2.5V • minimum 1,000K program/erase endurance cycle • Package Options - 48-pin TSOP (Type 1) - 48-ball 6mm x 8mm FBGA • Commercial and Industrial Temperature Range GENERAL DESCRIPTION The EN29LV400A is a 4-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 524,288 bytes or 256,144 words. Any byte can be programmed typically in 8µs. The EN29LV400A features 3.0V voltage read and write operation, with access times as fast as 45ns to eliminate the need for WAIT states in high-performance microprocessor systems. The EN29LV400A has separate Output Enable (OE#), Chip Enable (CE#), and Write Enable (WE#) controls, which eliminate bus contention issues. This device is designed to allow either single Sector or full chip erase operation, where each Sector can be individually protected against program/erase operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K program/erase cycles on each Sector. Rev. A, Issue Date: 2005/01/07 |
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