Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

IS62WV12816 Datasheet(PDF) 9 Page - Integrated Silicon Solution, Inc

Part # IS62WV12816
Description  128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM
Download  17 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS62WV12816 Datasheet(HTML) 9 Page - Integrated Silicon Solution, Inc

Back Button IS62WV12816 Datasheet HTML 5Page - Integrated Silicon Solution, Inc IS62WV12816 Datasheet HTML 6Page - Integrated Silicon Solution, Inc IS62WV12816 Datasheet HTML 7Page - Integrated Silicon Solution, Inc IS62WV12816 Datasheet HTML 8Page - Integrated Silicon Solution, Inc IS62WV12816 Datasheet HTML 9Page - Integrated Silicon Solution, Inc IS62WV12816 Datasheet HTML 10Page - Integrated Silicon Solution, Inc IS62WV12816 Datasheet HTML 11Page - Integrated Silicon Solution, Inc IS62WV12816 Datasheet HTML 12Page - Integrated Silicon Solution, Inc IS62WV12816 Datasheet HTML 13Page - Integrated Silicon Solution, Inc Next Button
Zoom Inzoom in Zoom Outzoom out
 9 / 17 page
background image
IS62WV12816ALL,
IS62WV12816BLL
ISSI®
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
9
Rev. E
06/08/05
WRITE CYCLE SWITCHING CHARACTERISTICS(1,2) (Over Operating Range)
45ns
55 ns
70 ns
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
tWC
Write Cycle Time
45
55
70
ns
tSCS1/tSCS2 CS1/CS2 to Write End
35
45
60
ns
tAW
Address Setup Time to Write End
35
45
60
ns
tHA
Address Hold from Write End
0
0
0
ns
tSA
Address Setup Time
0
0
0
ns
tPWB
LB, UB Valid to End of Write
35
45
60
ns
tPWE
WE Pulse Width
35
40
50
ns
tSD
Data Setup to Write End
20
25
30
ns
tHD
Data Hold from Write End
0
0
0
ns
tHZWE(3)
WE LOW to High-Z Output
20
20
20
ns
tLZWE(3)
WE HIGH to Low-Z Output
5
5
5
ns
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 0.9V, input pulse levels of 0.4V to 1.4V
and output loading specified in Figure 1.
2. The internal write time is defined by the overlap of
CS1 LOW, CS2 HIGH and UB or LB, and WE LOW. All signals must be in valid states to initiate a Write, but
any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the
write.
3. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.


Similar Part No. - IS62WV12816

ManufacturerPart #DatasheetDescription
logo
Integrated Silicon Solu...
IS62WV12816DALL ISSI-IS62WV12816DALL Datasheet
429Kb / 17P
   128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV12816DALL/DBLL ISSI-IS62WV12816DALL/DBLL Datasheet
429Kb / 17P
   128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV12816EALL ISSI-IS62WV12816EALL Datasheet
1Mb / 17P
   Three state outputs
IS62WV12816EBLL ISSI-IS62WV12816EBLL Datasheet
1Mb / 17P
   Three state outputs
More results

Similar Description - IS62WV12816

ManufacturerPart #DatasheetDescription
logo
Integrated Circuit Solu...
IS62LV12816L ICSI-IS62LV12816L Datasheet
462Kb / 10P
   128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
logo
Integrated Silicon Solu...
IS65WV12816ALL ISSI-IS65WV12816ALL Datasheet
133Kb / 19P
   128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62LV12816BLL ISSI-IS62LV12816BLL Datasheet
94Kb / 10P
   128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV12816DALL ISSI-IS62WV12816DALL Datasheet
429Kb / 17P
   128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
logo
Integrated Circuit Solu...
IC62LV12816L ICSI-IC62LV12816L Datasheet
139Kb / 10P
   128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
logo
Taiwan Memory Technolog...
T15V2M16B TMT-T15V2M16B Datasheet
93Kb / 12P
   128K X 16 LOW POWER CMOS STATIC RAM?
logo
Integrated Silicon Solu...
IS62WV1288ALL ISSI-IS62WV1288ALL Datasheet
111Kb / 15P
   128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV1288DALL ISSI-IS62WV1288DALL Datasheet
468Kb / 16P
   128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
logo
Pyramid Semiconductor C...
P3C1024L PYRAMID-P3C1024L Datasheet
114Kb / 10P
   ULTRA LOW POWER 128K x 8 CMOS STATIC RAM
logo
Integrated Silicon Solu...
IS62WV51216ALL ISSI-IS62WV51216ALL Datasheet
129Kb / 16P
   512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com