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IS61C256AH-20N Datasheet(PDF) 6 Page - Integrated Silicon Solution, Inc

Part # IS61C256AH-20N
Description  32K x 8 HIGH-SPEED CMOS STATIC RAM
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Manufacturer  ISSI [Integrated Silicon Solution, Inc]
Direct Link  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS61C256AH-20N Datasheet(HTML) 6 Page - Integrated Silicon Solution, Inc

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Integrated Silicon Solution, Inc. — 1-800-379-4774
SR020-1O
05/24/99
IS61C256AH
ISSI®
WRITE CYCLE SWITCHING CHARACTERISTICS(1,3) (Over Operating Range)
-10
-12
-15
-20
-25
Symbol Parameter
Min.
Max
Min. Max.
Min. Max.
Min. Max.
Min. Max.
Unit
tWC
Write Cycle Time
10
12
15
20
25
ns
tSCE
CE to Write End
9
10
10
13
15
ns
tAW
Address Setup Time
9
10
12
15
20
ns
to Write End
tHA
Address Hold
0
0
0
0
0
ns
from Write End
tSA
Address Setup Time
0
0
0
0
0
ns
tPWE1
WE Pulse Width (OE LOW)
8
8
10
13
15
ns
tPWE2
WE Pulse Width (OE HIGH)
6.5
7
8
10
12
ns
tSD
Data Setup to Write End
7
7
9
10
12
ns
tHD
Data Hold from Write End
0
0
0
0
0
ns
tHZWE(2)
WE LOW to High-Z Output
6
6
7
8
10
ns
tLZWE(2)
WE HIGH to Low-Z Output
0
0
0
0
0
ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and
output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured
±500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of
CE LOW and WE LOW. All signals must be in valid states to initiate a Write,
but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling
edge of the signal that terminates the write.
AC WAVEFORMS
WRITE CYCLE NO. 1 (
WE
WE
WE
WE
WE Controlled)(1,2)
DATA UNDEFINED
t WC
VALID ADDRESS
t SCE
t PWE1
t PWE2
t AW
t HA
HIGH-Z
t HD
t SA
t HZWE
ADDRESS
CE
WE
DOUT
DIN
DATAIN VALID
t LZWE
t SD
CE_WR1.eps


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