2

RF Device Data

Freescale Semiconductor

MRF6S9045NR1 MRF6S9045NBR1 MRF6S9045MR1 MRF6S9045MBR1

Table 2. Thermal Characteristics

Characteristic

Symbol

Unit

Thermal Resistance, Junction to Case

Case Temperature 81°C, 45 W CW

Case Temperature 79°C, 10 W CW

1.0

1.1

°C/W

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22-A114)

1A (Minimum)

Machine Model (per EIA/JESD22-A115)

A (Minimum)

Charge Device Model (per JESD22-C101)

IV (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD 22-A113, IPC/JEDEC J-STD-020

3

260

°C

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

—

—

10

µAdc

Zero Gate Voltage Drain Leakage Current

—

—

1

µAdc

Gate-Source Leakage Current

—

—

1

µAdc

On Characteristics

Gate Threshold Voltage

1

2

3

Vdc

Gate Quiescent Voltage

2

2.9

4

Vdc

Drain-Source On-Voltage

—

0.22

0.3

Vdc

Forward Transconductance

—

4

—

S

Dynamic Characteristics

Input Capacitance

—

77

—

pF

Output Capacitance

—

27

—

pF

Reverse Transfer Capacitance

—

0.78

—

pF

N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9.8 dB

@ 0.01% Probability on CCDF

Power Gain

21

22.7

25

dB

Drain Efficiency

30.5

32

—

%

Adjacent Channel Power Ratio

ACPR

—

-47

-45

dBc

Input Return Loss

MRF6S9045NR1(MR1)

MRF6S9045NBR1(MBR1)

IRL

—

-20

-20

-9

-7

dB

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access

the MTTF calculators by product.

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.