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UTRON
UT51C164
Rev 1.4
256K X 16 BIT EDO DRAM
UTRON TECHNOLOGY INC.
P90005
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
6
AC CHARACTERISTICS (TA = 0℃ to 70°C)
Test condition: VDD = 5.0V±0.5V, VIH / VIL=3V / 0V, VOH / VOL=2.0 / 0.8)
35
40
50
60
SYMBOL PARAMETER
Min. Max. Min. Max. Min. Max. Min. Max.
UNIT NOTE
1
tRAS
RAS Pulse Width
35
75K
40
75K
50
75K
60
75K
ns
2
tRC
Read or Write Cycle Time
70
75
90
110
ns
3
tRP
RAS Precharge Time
25
25
30
40
ns
4
tCSH
CAS Hold Time
35
40
50
60
ns
5
tCAS
CAS Pulse Width
8
8
10
10
ns
6
tRCD
RAS to CAS Delay
13
24
17
28
19
36
20
45
ns
7
tRCS
Read Command Setup Time
0
0
0
0
ns
*1
8
tASR
Row Address Setup Time
0
0
0
0
ns
9
tRAH
Row Address Hold Time
6
7
9
10
ns
10
tASC
Column Address Setup Time
0
0
0
0
ns
11
tCAH
Column Address Hold Time
6
7
9
10
ns
12
tRSH
RAS to CAS Hold Time
10
12
14
15
ns
13
tCRP
CAS to RAS Precharge
Time
5
5
5
5
ns
14
tRCH
Read Command Hold Time
Reference CAS
0
0
0
0
ns
*2
15
tRRH
Read Command Hold Time
Reference RAS
0
0
0
0
ns
*2
16
tROH
RAS Hold Time Referenced
to OE
7
8
10
10
ns
17
tOAC
Access Time from OE
11
12
14
15
ns
*9
18
tCAC
Access Time from CAS
11
12
14
15
ns
*3,4,11
19
tRAC
Access Time from RAS
35
40
50
60
ns
*3,5,6
20
tCAA
Access Time From Column
Address
18
20
24
30
ns
*3,4,7
21
tLZ
OE or CAS to Low-Z Output
0
0
0
0
ns
*13
22
tHZ
OE or CAS to High-Z
Output
0
5
0
6
0
8
0
10
ns
*13
23
tAR
Column Address Hold Time
from RAS
25
30
40
50
ns
24
tRAD
RAS to Column Address
Delay Time
10
17
12
20
14
26
15
30
ns
*8
25
tT
Transition Time
1.5
50
1.5
50
1.5
50
1.5
50
ns
*12
26
tCWL
Write Command to CAS
Lead Time
8
10
10
10
ns
27
tWCS
Write Command Setup Time
0
0
0
0
ns
*9,10
28
tWCH
Write Command Hold time
5
6
7
10
ns
29
tWP
Write Pulse Width
5
6
7
10
ns
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