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UTRON
UT51C164
Rev 1.4
256K X 16 BIT EDO DRAM
UTRON TECHNOLOGY INC.
P90005
1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C.
TEL: 886-3-5777882 FAX: 886-3-5777919
9
TRUTH TABLE
FUNCTION
RAS
LCAS
UCAS
WE
OE ADDRESS DQ(0-7) DQ(8-15) NOTE
Standby
H
H
H
X
X
X
High-Z
High-Z
Read: Word
L
L
L
H
L
ROW/COL DQ-OUT
Read: Lower Byte
L
L
H
H
L
ROW/COL DQ-OUT High-Z
Read: Upper Byte
L
H
L
H
L
ROW/COL High-Z
DQ-OUT
Write: Word
(Early-Write)
L
L
L
L
X
ROW/COL DQ-IN
Write: Lower Byte
(Early-Write)
L
L
H
L
X
ROW/COL DQ-IN
High-Z
Write: Upper Byte
(Early-Write)
L
H
L
L
X
ROW/COL High-Z
DQ-IN
Read-Write
L
L
L
H→L L→H ROW/COL DQ-OUT,DQ-IN
*1,2
EDO Page-Mode
Read
L
H→L
H→L
H
L
COL
DQ-OUT
*2
EDO Page-Mode
Write
L
H→L
H→L
L
X
COL
DQ-IN
*2
EDO Page –Mode
Read-Write
L
H→L
H→L
H→L L→H
COL
DQ-OUT,DQ-IN
*1,2
Hidden Refresh
Read
L→H→L
L
L
H
L
ROW/COL DQ-OUT
*2
RAS Only
Refresh
L
H
H
X
X
ROW
High-Z
CBR Refresh
H→L
L
L
X
X
X
High-Z
Notes:
1. Byte Write cycles LCAS or UCAS active.
2. Byte Read cycles LCAS or UCAS active.
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