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LM5026MT Datasheet(PDF) 5 Page - National Semiconductor (TI) |
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LM5026MT Datasheet(HTML) 5 Page - National Semiconductor (TI) |
5 / 23 page Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. V IN to GND -0.3V to 105V V CC to GND -0.3V to 16V CS to GND -0.3 to 1.0V COMP Input Current 10mA All other inputs to GND -0.3 to 7V ESD Rating (Note 2) Human Body Model 2kV Storage Temperature Range -65˚C to 150˚C Junction Temperature 150˚C Operating Ratings (Note 1) V IN Voltage 13 to 100V External Voltage Applied to V CC 8V to 15V Operating Junction Temperature -40˚C to +125˚C Electrical Characteristics Specifications with standard typeface are for T J = 25˚C, and those with boldface type apply over full Operating Junction Temperature range.V IN = 48V, VCC = 10V, RT = 30.0k Ω,R SET = 34.8k Ω) unless otherwise stated (Note 3) Symbol Parameter Conditions Min Typ Max Units Startup Regulator V CC Reg V CC Regulation No Load 7.3 7.6 7.9 V V CC Current Limit (Note 4) 20 25 mA I-V IN Startup Regulator Leakage (external Vcc Supply) V IN = 100V 165 500 µA Shutdown Current (Iin) UVLO = 0V 350 450 µA V CC Supply V CC Under-voltage Lockout Voltage (positive going V cc) V CC Reg - 220mV V CC Reg - 120mV V V CC Under-voltage Hysteresis 1.0 1.5 2.0 V V CC Supply Current (I CC) C gate = 0, UVLO = 1.3V 4.2 mA Reference Supply V REF Ref Voltage I REF =0mA 4.85 5 5.15 V Ref Voltage Regulation I REF = 0 to 10mA 25 50 mV Ref Current Limit 10 20 mA UVLO Shutdown/Standby Undervoltage Shutdown Threshold 0.3 0.4 0.5 V Undervoltage Shutdown Hysteresis 0.1 V Undervoltage Standby Threshold 1.21 1.25 1.29 V Undervoltage Standby Hysteresis Current Source 16 20 24 µA Current Limit Cycle by Cycle Threshold Voltage 0.45 0.5 0.55 V ILIM Delay to Output CS step from 0 to 0.6V Time to onset of OUT transition (90%) Cgate=0 40 ns Leading Edge Blanking Time 70 100 130 ns www.national.com 5 |
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