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IDTQS3VH16245 Datasheet(PDF) 2 Page - Integrated Device Technology |
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IDTQS3VH16245 Datasheet(HTML) 2 Page - Integrated Device Technology |
2 / 8 page 2 INDUSTRIALTEMPERATURERANGE IDTQS3VH16245 2.5V / 3.3V 16-BIT HIGH BANDWIDTH BUS SWITCH ABSOLUTE MAXIMUM RATINGS(1) Symbol Description Max. Unit VTERM(2) SupplyVoltagetoGround – 0.5 to 4.6 V VTERM(3) DC Switch Voltage VS – 0.5 to 5.5 V VTERM(3) DC Input Voltage VIN – 0.5 to 5.5 V VAC AC Input Voltage (pulse width ≤20ns) – 3 V IOUT DCOutputCurrent(max.current/pin) 120 mA TSTG StorageTemperature -65to+150 °C NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. VCC terminals. 3. All terminals except VCC. PIN CONFIGURATION SSOP/ TSSOP TOP VIEW CAPACITANCE (TA = +25oC, f = 1MHz, VIN = 0V, VOUT = 0V) Symbol Parameter(1) Typ. Max. Unit CIN ControlInputs 3 5 pF CI/O Quickswitch Channels (Switch OFF) 4 6 pF CI/O Quickswitch Channels (Switch ON) 8 12 pF NOTE: 1. This parameter is guaranteed but not production tested. PIN DESCRIPTION Pin Names Description OEx OutputEnables A x Data I/Os B x Data I/Os FUNCTION TABLE(1) OE1 OE2 A0 - A7 A8 - A15 Function LL B0 - B7 B8 - B15 Connect LH B0 - B7 ZA0 - A7 = B0 - B7, B8 - B15 Disconnect HL Z B8 - B15 B0 - B7, Disconnect, A8 - A15 = B8 - B15 H H Z Z Disconnect NOTE: 1. H = HIGH Voltage Level L = LOW Voltage Level Z = High-Impedence 48 NC OE1 1 47 A0 2 B0 25 NC 24 OE2 46 3 B1 A1 45 4 GND GND 44 5 B2 A2 43 6 B3 A3 41 8 B4 A4 40 9 B5 A5 39 10 GND GND 42 7 VCC VCC 38 11 B6 A6 37 B7 12 A7 36 B8 A8 13 35 A9 14 B9 34 15 GND GND 33 16 B10 A10 32 17 B11 A11 31 18 VCC VCC 29 20 B13 A13 28 21 GND GND 27 22 B14 A14 30 19 B12 A12 26 23 B15 A15 |
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