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HY57V281620ETP-H Datasheet(PDF) 6 Page - Hynix Semiconductor |
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HY57V281620ETP-H Datasheet(HTML) 6 Page - Hynix Semiconductor |
6 / 13 page Rev. 1.1 / Jan. 2005 6 Synchronous DRAM Memory 128Mbit (8Mx16bit) HY57V281620E(L)T(P) Series BASIC FUNCTIONAL DESCRIPTION Mode Register BA1 BA0 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 0000 OP Code 00 CAS Latency BT Burst Length OP Code A9 Write Mode 0Burst Read and Burst Write 1 Burst Read and Single Write Burst Type A3 Burst Type 0 Sequential 1 Interleave Burst Length A2 A1 A0 Burst Length A3 = 0 A3=1 00 0 11 00 1 22 01 0 4 4 01 1 88 10 0 Reserved Reserved 10 1 Reserved Reserved 1 10 Reserved Reserved 1 11 Full Page Reserved CAS Latency A6 A5 A4 CAS Latency 0 0 0 Reserved 0 0 1 1 0 1 0 2 0 1 1 3 1 0 0 Reserved 1 0 1 Reserved 1 1 0 Reserved 1 1 1 Reserved |
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