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datasheet

K9F1G08U0E

FLASH MEMORY

Rev. 1.11

SAMSUNG CONFIDENTIAL

2.4 Valid Block

NOTE :

1) The device may include initial invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid blocks is presented with both

cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits. Do not erase or program factory-marked bad blocks. Refer to the

attached technical notes for appropriate management of invalid blocks.

2) The 1st block, which is placed on 00h block address, is guaranteed to be a valid block up to 1K program/erase cycles with 1bit/528Byte ECC.

2.5 AC Test Condition

(K9F1G08U0E-XCB0 :TA=0 to 70

C, K9F1G08U0E-XIB0:TA=-40 to 85C, K9F1G08U0E : Vcc=2.7V~3.6V unless otherwise noted)

NOTE :

Capacitance is periodically sampled and not 100% tested.

2.7 Mode Selection

NOTE :

2) WP should be biased to CMOS high or CMOS low for standby.

Parameter

Symbol

Min

Typ.

Max

Unit

K9F1G08U0E

1,004

-

1,024

Blocks

Parameter

K9F1G08U0E

Input Pulse Levels

0V to Vcc

Input Rise and Fall Times

5ns

Input and Output Timing Levels

Vcc/2

Output Load

1 TTL GATE and CL=50pF

Item

Symbol

Test Condition

Min

Max

Unit

Input/Output Capacitance

-

10

pF

Input Capacitance

-

10

pF

CLE

ALE

CE

WE

RE

WP

Mode

HL

L

H

X

Read Mode

Command Input

L

H

L

H

X

Address Input(4clock)

HL

L

H

H

Write Mode

Command Input

L

H

L

H

H

Address Input(4clock)

LLL

H

H

Data Input

LLL

H

X

Data Output

X

X

X

X

H

X

During Read(Busy)

X

X

X

X

X

H

During Program(Busy)

X

X

X

X

X

H

During Erase(Busy)

X

X

X

X

L

Write Protect

XX

H

X

X

Stand-by