UPA2707GR-E2 datasheet(1/7 Pages) NEC

Part #	UPA2707GR-E2

Description	SWITCHING N-CHANNEL POWER MOSFET

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MOS FIELD EFFECT TRANSISTOR

µ PA2707GR

SWITCHING

N-CHANNEL POWER MOS FET

DATA SHEET

Document No. G17032EJ1V0DS00 (1st edition)

Date Published June 2005 NS CP(K)

Printed in Japan

2004

DESCRIPTION

The µ PA2707GR is N-channel MOS Field Effect

Transistor designed for DC/DC converter and power

management applications of notebook computer.

FEATURES

• Low on-state resistance

RDS(on)1 = 4.3 m

Ω MAX. (VGS = 10 V, ID = 9.0 A)

RDS(on)2 = 5.6 m

Ω MAX. (VGS = 4.5 V, ID = 9.0 A)

• Low Ciss: Ciss = 6600 pF TYP. (VDS = 10 V, VGS = 0 V)

• Small and surface mount package (Power SOP8)

ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)

Drain to Source Voltage (VGS = 0 V)

VDSS

30

V

Gate to Source Voltage (VDS = 0 V)

VGSS

±20

V

Drain Current (DC)

ID(DC)

±19

A

Drain Current (pulse)

Note1

ID(pulse)

±76

A

Total Power Dissipation

Note2

PT1

1.1

W

Total Power Dissipation (PW = 10 sec)

Note2

PT2

2.5

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

−55 to +150

°C

Single Avalanche Current

Note3

IAS

19

A

Single Avalanche Energy

Note3

EAS

36

mJ

Notes 1. PW

≤ 10

µs, Duty Cycle ≤ 1%

2. Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm

3. Starting Tch = 25°C, VDD = 15 V, RG = 25

Ω, L = 100

µH, VGS = 20 → 0 V

THERMAL RESISTANCE

Channel to Ambient

Note

Rth(ch-A)

114

°C/W

Channel to Drain Lead

Note

Rth(ch-L)

22

°C/W

Note Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm

ORDERING INFORMATION

PART NUMBER

PACKAGE

µ PA2707GR-E1

Power SOP8

µ PA2707GR-E1-A

Note

Power SOP8

µ PA2707GR-E2

Power SOP8

µ PA2707GR-E2-A

Note

Power SOP8

Note Pb-free (This product does not contain Pb in

external electrode and other parts.)

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