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2SK3639-ZK Datasheet(PDF) 1 Page - NEC |
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2SK3639-ZK Datasheet(HTML) 1 Page - NEC |
1 / 7 page The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. MOS FIELD EFFECT TRANSISTOR 2SK3639 SWITCHING N-CHANNEL POWER MOS FET DATA SHEET Document No. D15967EJ3V0DS00 (3rd edition) Date Published January 2005 NS CP(K) Printed in Japan 2002 The mark shows major revised points. DESCRIPTION The 2SK3639 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES • Low on-state resistance RDS(on)1 = 5.5 m Ω MAX. (VGS = 10 V, ID = 32 A) RDS(on)2 = 8.5 m Ω MAX. (VGS = 4.5 V, ID = 32 A) • Low Ciss: Ciss = 2400 pF TYP. ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 20 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC) ±64 A Drain Current (pulse) Note ID(pulse) ±256 A Total Power Dissipation (TC = 25°C) PT1 40 W Total Power Dissipation PT2 1.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Note PW ≤ 10 µs, Duty Cycle ≤ 1% ORDERING INFORMATION PART NUMBER PACKAGE 2SK3639-ZK TO-252 (MP-3ZK) (TO-252) |
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