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2SK3634 Datasheet(PDF) 1 Page - NEC |
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2SK3634 Datasheet(HTML) 1 Page - NEC |
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1 / 8 page  The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. MOS FIELD EFFECT TRANSISTOR 2SK3634 SWITCHING N-CHANNEL POWER MOS FET DATA SHEET Document No. D15936EJ2V0DS00 (2nd edition) Date Published August 2004 NS CP(K) Printed in Japan 2001 The mark shows major revised points. DESCRIPTION The 2SK3634 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. FEATURES • High voltage: VDSS = 200 V • Gate voltage rating: ±30 V RDS(on) = 0.60 Ω MAX. (VGS = 10 V, ID = 3.0 A) • Low Ciss: Ciss = 270 pF TYP. (VDS = 10 V, VGS = 0 V) • Built-in gate protection diode • TO-251/TO-252 package • Avalanche capability rated ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 200 V Gate to Source Voltage (VDS = 0 V) VGSS ±30 V Drain Current (DC) (TC = 25°C) ID(DC) ±6.0 A Drain Current (Pulse) Note1 ID(pulse) ±18 A Total Power Dissipation (TC = 25°C) PT1 20 W Total Power Dissipation (TA = 25°C) PT2 1.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Single Avalanche Current Note2 IAS 6.0 A Single Avalanche Energy Note2 EAS 3.6 mJ Repetitive Avalanche Current Note3 IAR 6.0 A Repetitive Pulse Avalanche Energy Note3 EAR 2.0 mJ Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 100 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 µH 3. Tch ≤ 125°C , RG = 25 Ω, VDD = 100 V (TO-251) (TO-252) ORDERING INFORMATION PART NUMBER PACKAGE 2SK3634 TO-251 (MP-3) 2SK3634-Z TO-252 (MP-3Z) |
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