2SK3574-Z datasheet(1/8 Pages) NEC

Part #	2SK3574-Z

Description	SWITCHING N-CHANNEL POWER MOSFET

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MOS FIELD EFFECT TRANSISTOR

2SK3574

SWITCHING

N-CHANNEL POWER MOS FET

DATA SHEET

Document No. D16260EJ2V0DS00 (2nd edition)

Date Published September 2002 NS CP(K)

Printed in Japan

©

2002

The mark

!

! shows major revised points.

DESCRIPTION

The 2SK3574 is N-channel MOS FET device that

features a low on-state resistance and excellent switching

characteristics, designed for low voltage high current

applications such as DC/DC converter with synchronous

rectifier.

FEATURES

•4.5V drive available

•Low on-state resistance

RDS(on)1 = 13.5 m

Ω MAX. (VGS = 10 V, ID = 24 A)

•Low gate charge

QG = 22 nC TYP. (VDD = 24 V, VGS = 10 V, ID = 48 A)

•Built-in gate protection diode

•Avalanche capability ratings

•Surface mount device available

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V)

VDSS

30

V

Gate to Source Voltage (VDS = 0 V)

VGSS

±20

V

Drain Current (DC) (TC = 25°C)

ID(DC)

±48

A

Drain Current (pulse)

Note1

ID(pulse)

±140

A

Total Power Dissipation (TA = 25°C)

PT1

1.5

W

Total Power Dissipation (TC = 25°C)

PT2

29

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

–55 to +150

°C

Single Avalanche Current

Note2

IAS

19

A

Single Avalanche Energy

Note2

EAS

36

mJ

Notes 1. PW

≤ 10

µs, Duty Cycle ≤ 1%

2. Starting Tch = 25°C, VDD = 15 V, RG = 25

Ω, VGS = 20 → 0 V

ORDERING INFORMATION

PART NUMBER

PACKAGE

2SK3574

TO-220AB

2SK3574-S

TO-262

2SK3574-ZK

TO-263

2SK3574-Z

TO-220SMD

Note

Note TO-220SMD package is produced only in Japan.

5

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