Data Sheet D16260EJ2V0DS

7

2SK3574

PACKAGE DRAWINGS (Unit: mm)

1)

TO-220AB(MP-25)

4.8 MAX.

1.Gate

2.Drain

3.Source

4.Fin (Drain)

1 2 3

10.6 MAX.

10.0 TYP.

3.6±0.2

4

1.3±0.2

0.75±0.1

2.54 TYP.

2.54 TYP.

1.3±0.2

0.5±0.2

2.8±0.2

φ

2)

TO-262(MP-25 Fin Cut)

4.8 MAX.

1.Gate

2.Drain

3.Source

4.Fin (Drain)

1

2

3

10 TYP.

1.3±0.2

0.75±0.3

2.54 TYP.

2.54 TYP.

1.3±0.2

0.5±0.2

2.8±0.2

4

3)

TO-263(MP-25ZK)

10.0±0.2

2.54

0.7±0.15

123

4

4.45±0.2

1.3±0.2

0.5±0.2

1.Gate

2.Drain

3.Source

4.Fin (Drain)

0.4

No plating

8.4 TYP.

0.025 to

0.25

0.25

4)

TO-220SMD(MP-25Z)

Note

10 TYP.

1.4±0.2

2.54 TYP.

2.54 TYP.

123

4

4.8 MAX.

1.3±0.2

0.5±0.2

0.5R

TYP.

0.8R

TYP.

0.75±0.3

1.Gate

2.Drain

3.Source

4.Fin (Drain)

Note This package is produced only in Japan.

Remark

The diode connected between the gate and

source of the transistor serves as a protector

against ESD. When this device actually used,

an additional protection circuit is externally

required if a voltage exceeding the rated voltage

may be applied to this device.

5

EQUIVALENT CIRCUIT

Source

Body

Diode

Gate

Protection

Diode

Gate

Drain