2SK3507-ZK datasheet(1/8 Pages) NEC

Part #	2SK3507-ZK

Description	SWITCHING N-CHANNEL POWER MOSFET

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MOS FIELD EFFECT TRANSISTOR

2SK3507

SWITCHING

N-CHANNEL POWER MOS FET

DATA SHEET

Document No. D15387EJ1V0DS00 (1st edition)

Date Published December 2003 NS CP(K)

Printed in Japan

2001

DESCRIPTION

The 2SK3507 is N-channel MOS FET device that features

a low on-state resistance and excellent switching characteristics,

designed for low voltage high current applications such as DC/DC

converter with synchronous rectifier.

FEATURES

• 4.5 V drive available

• Low on-state resistance

RDS(on)1 = 45 m

Ω MAX. (VGS = 10 V, ID = 11 A)

• Low gate charge

QG = 8.5 nC TYP. (VDD = 24 V, VGS = 10 V, ID = 22 A)

• Built-in G-S protection diode

• Surface mount package available

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage (VGS = 0 V)

VDSS

30

V

Gate to Source Voltage (VDS = 0 V)

VGSS

±16

V

Drain Current (DC) (TC = 25°C)

ID(DC)

±22

A

Drain Current (pulse)

Note1

ID(pulse)

±45

A

Total Power Dissipation (TC = 25°C)

PT1

20

W

Total Power Dissipation

Note2

PT2

1.5

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

−55 to +150

°C

Single Avalanche Current

Note3

IAS

10

A

Single Avalanche Energy

Note3

EAS

10

mJ

Notes 1. PW

≤ 10

µs, Duty Cycle ≤ 1%

2. Mounted on glass epoxy board of 1 inch x 1 inch x 1.6 mm

3. Starting Tch = 25°C, VDD = 15 V, RG = 25

Ω, VGS = 20 → 0 V

ORDERING INFORMATION

PART NUMBER

PACKAGE

2SK3507-ZK

TO-252 (MP-3ZK)

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