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2SC4346 Datasheet(PDF) 1 Page - NEC |
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2SC4346 Datasheet(HTML) 1 Page - NEC |
1 / 5 page The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. SILICON POWER TRANSISTOR 2SC4346,4346-Z NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH SPEED SWITCHING, HIGH VOLTAGE SWITCHING DATA SHEET Document No. D17082EJ2V0DS00 (2nd edition) Date Published August 2004 NS CP(K) Printed in Japan 2004 The mark shows major revised points. ORDERING INFORMATION PART NUMBER PACKAGE 2SC4346 TO-251 (MP-3) 2SC4346-Z TO-252 (MP-3Z) DESCRIPTION The 2SC4346 is a mold power transistor developed for high-speed switching, high voltage switching, and is ideal for use as a driver in devices such as switching regulators, DC/DC converters, and high-frequency power amplifiers. FEATURES • Small package, but can control for high-current • Low collector saturation voltage VCE(sat) = 1.0 V MAX. (IC = 2.0 A) • Ultra high-speed switching tf = 0.3 µs MAX. (IC = 2.0 A) • Base reverse bias safe operating area is wide VCEX(SUS)1 = 450 V MIN. (IC = 2.0 A) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO 500 V Collector to Emitter Voltage VCEO 400 V Emitter to Base Voltage VEBO 8.0 V Collector Current (DC) IC(DC) 5.0 A Collector Current (pulse) IC(pulse) Note1 10 A Base current (DC) IB(DC) 2.5 A Total Power Dissipation PT1 (TC = 25°C) 18 W Total Power Dissipation PT2 (TA = 25°C) 1.0 Note2, 2.0 Note3 W Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50% 2. Mounted on print board 3. Mounted on ceramic substrate of 7.5 mm 2 x 0.7 mm |
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