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1998

©

Document No. D15410EJ2V0DS00 (2nd edition)

Date Published July 2002 N CP(K)

Printed in Japan

SILICON POWER TRANSISTOR

2SB1669

PNP SILICON EPITAXIAL TRANSISTOR

FOR HIGH-SPEED SWITCHING

DATA SHEET

2002

The 2SB1669 is a power transistor that can be directly driven from

the output of an IC. This transistor is ideal for OA and FA equipment

such as motor and solenoid drivers.

FEATURES

• High DC current amplifier rate

• Z type available for surface mounting supported prodcuts

°°°°C)

Parameter

Symbol

Conditions

Ratings

Unit

Collector to base voltage

−60

V

Collector to emitter voltage

−60

V

Emitter to base voltage

−7.0

V

Collector current (DC)

−3.0

A

Collector current (pulse)

PW

≤ 10 ms,

duty cycle

≤ 50%

−6.0

A

Base current (DC)

−1.0

A

°C)

25

W

Total power dissipation

°C)

1.5

W

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

ORDERING INFORMATION

Part No.

Package

2SB1669

TO-220AB

2SB1669-S

TO-262

2SB1669-Z

TO-220SMD